MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; TO-247AC; PD 140W; VGS +/-2, Pack of 20

Description

Overview P-Channel Power MOSFET over 8A, InfineonInfineons range of diskrete HEXFET power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.Features:Dimensions-15.87 x 5.31 x 20.70 mm Gate Charge, Total-97 nC Height-0.815" (20.7mm) Length-0.625" (15.875mm) Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Package Type-TO-247AC Polarization-P-Channel Power Dissipation-140 W